Effect of Annealing after Metal Etch on Analog Device and its Impact on Yield Performance

摘要

This paper demonstrates the importance of annealing in presence of forming gas after first layer metal etch in analog devices. A drop of 3 mA analog power supply current has been observed. DC-offset value has also reduced from 40 mV to -14 mV. Yield performance of the device has improved dramatically. All these lead to the improvement of the device performance and demonstrate the degradation of MOSFET matching circuits and analog capacitors during metal etch.