Photoluminescence quantum yield of CdSe-ZnS/CdS/ZnS core-multishell quantum dots approaches 100 due to enhancement of charge carrier confinement

摘要

Quantum dots (QDs) with the highest possible photoluminescence quantum yields are necessary for modern nanotechnology applications to biosensing and optoelectronics. To date, core-shell QDs are the best. We suggest and demonstrate a novel approach to enhancement of charge-carrier confinement in the core of CdSe QDs by creating a ZnS/CdS/ZnS shell with staggered potential barrier. The CdS interlayer breaks the ZnS-shell structure continuity, which allows combining the benefits of a single ZnS-monolayer inner shell, creating the highest possible confinement potential, with a sufficient overall shell thickness and suitability for common surface modification techniques. This approach allows the preparation of CdSe-ZnS/CdS/ZnS QDs with photoluminescence quantum yields approaching 100% and small photoluminescence peak width.