Luminescent properties of ZnTe film grown on silicon substrate with ZnO buffer layer

摘要

Growth and optical properties of ZnTe film on ZnO buffered Si substrate using metal-organic vapor phase epitaxy technique (MOVPE) were reported. With increasing the annealing temperature of ZnO buffer layer, the crystallization of ZnTe assessed by X-ray diffraction is improved. Temperature-dependent photoluminescence spectra of the ZnTe film can be divided into two temperature regions. The dominants emission is binding excitons from 83K to 157K, While above 157K, the binding excitons are delocalized to become free excitons, and free excitons emission becomes dominant.