Uniform deposition of zirconium dioxide layers by atmospheric-pressure plasma-enhanced chemical vapor deposition

摘要

Summary form only given. Plasma-enhanced chemical vapor deposition (PECVD) at high pressure has been a challenging topic because of the inhomogeneous plasma instability and lack of process information. Here we report a demonstration of atmospheric-pressure plasma-enhanced CVD (AP-PECVD) for uniform deposition of zirconium dioxide (ZrO) layers that are widely used in electronics and mechanical applications.