Research Institute of Electronics, Shizuoka University, Hamamatsu, Japan;
Research Institute of Electronics, Shizuoka University, Hamamatsu, Japan;
Research Institute of Electronics, Shizuoka University, Hamamatsu, Japan;
Research Institute of Electronics, Shizuoka University, Hamamatsu, Japan;
Faculty of Engineering, Universitas Indonesia, Depok, Indonesia;
Faculty of Engineering, Universitas Indonesia, Depok, Indonesia;
Faculty of Engineering, Universitas Indonesia, Depok, Indonesia;
Faculty of Engineering, Universitas Indonesia, Depok, Indonesia;
Indian Institute of Technology, Roorke, India;
Japan Advanced Institute of Science and Technology, Nomi, Japan;
Japan Advanced Institute of Science and Technology, Nomi, Japan;
Doping; Silicon; Temperature; Nanoscale devices; Transistors; Energy states; Couplings;
机译:绝缘体上硅纳米线晶体管中双层量子点形成的证据
机译:AG纳米线在ZnO量子点/ AG纳米线混合通道光薄膜晶体管中的双重作用
机译:通过抑制无意量子点形成在重掺杂硅纳米线上的悬浮量子点制造
机译:高掺杂Si纳米线晶体管中的少量掺杂量子点形成的统计研究
机译:庚烯的稳定杂并苯类似物:在有机晶体管中的合成和导电性能的研究,以及用于光电的量子点导电聚合物(QD:CP)的光诱导形成。
机译:基于量子点/还原氧化石墨烯碎片修饰的ZnO纳米线的高性能光调制薄膜晶体管
机译:AG纳米线在ZnO量子点/ AG纳米线混合通道光薄膜晶体管中的双重作用