首页> 外文会议>2012 IEEE 18th International On-Line Testing Symposium. >Fault-based reliable design-on-upper-bound of electronic systems for terrestrial radiation including muons, electrons, protons and low energy neutrons
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Fault-based reliable design-on-upper-bound of electronic systems for terrestrial radiation including muons, electrons, protons and low energy neutrons

机译:基于系统的基于故障的可靠的上下辐射电子系统设计,用于地面辐射,包括μ子,电子,质子和低能中子

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In-depth study on environmental radiation spectra of neutrons, protons, muons, electrons, gamma rays are carried out. Soft-error rates in 130nm SRAMs are estimated based on the survey results with the following conclusions: (1) Charge deposition by muons is relatively high when the muons penetrate p-wells in SRAMs, suggesting current devices have been already affected if the critical charge is below 1fC. (2) Electrons and gamma rays may have certain impacts when the critical charge reduces as low as 0.05fC, suggesting CMOS devices will be safe for at least near future against soft error by electrons and gamma rays. (3) Soft error rates due to both muons and electrons drastically increase as critical charge reduced below certain threshold values.
机译:对中子,质子,μ子,电子,γ射线的环境辐射光谱进行了深入研究。根据调查结果估算出130nm SRAM中的软错误率,并得出以下结论:(1)当μ子穿透SRAM中的p阱时,μ子的电荷沉积相对较高,这表明如果临界电荷已经影响了当前器件低于1fC。 (2)当临界电荷降低至0.05fC时,电子和伽马射线可能会产生一定的影响,这表明CMOS器件至少在不久的将来对电子和伽马射线的软错误是安全的。 (3)由于临界电荷减小到某些阈值以下,由μ子和电子引起的软错误率急剧增加。

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