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EMI Modeling of Three-Level Active Neutral-Point-Clamped SiC Inverter Under Different Modulation Schemes

机译:不同调制方式下三电平有源中性点钳位SiC逆变器的EMI建模

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摘要

This paper investigates the electromagnetic interference (EMI) emission in three-level active neutral-point-clamped (3L-ANPC) silicon carbide (SiC) inverter. Four typical modulation schemes of 3L-ANPC inverter are considered. An EMI model is established by including all the system parasitics and noise sources. Based on this model, a comparison of different modulation schemes on EMI emission is carried out. Simulations are performed in a case study to confirm the theoretical expectations.
机译:本文研究了三电平有源中性点钳位(3L-ANPC)碳化硅(SiC)逆变器的电磁干扰(EMI)辐射。考虑了3L-ANPC逆变器的四种典型调制方案。通过包括所有系统寄生效应和噪声源来建立EMI模型。基于此模型,对EMI辐射的不同调制方案进行了比较。在案例研究中进行仿真以确认理论预期。

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